Source Part Number 1N4148 Parts With the NSN 5961-01-203-4101 by Microsemi Corp

Mfg Part Number: 1N4148	NSN : 5961-01-203-4101	NIIN : 012034101
CAGE Code : 7AFQ6	Manufacturer: Microsemi Corp	Item Name : Semiconductor Device Diode
FSC : 5961 Semiconductor Devices and Associated Hardware

Thank you for your continued interest in the parts associated with the NSN 5961-01-203-4101, those of which are readily available for purchase on Automatize Electronics. The Semiconductor Device Diode item associated with the part number 1N4148, by Microsemi Corp, is currently available on our database; thus, if you wish to begin the part number 1N4148 procurement process, we ask that you please fill out and submit an Instant RFQ form detailing your requirements on parts needed. This includes desired quantities, target prices, expected shipping time frames, and more, as applicable. Upon receival, our representatives will harness your provided information and formulate a solution which satisfies your operational needs in just 15 minutes or less.

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NSN Information for Part Number 1N4148 with NSN 5961-01-203-4101, 5961012034101

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-203-4101 Item Description: Semiconductor Device Diode	5961	012034101	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	G	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1n4148	5	2	3

Characteristics Data of NSN 5961-01-203-4101, 5961012034101

MRC	Criteria	Characteristic
ABHP	OVERALL LENGTH	2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM
AGAV	III END ITEM IDENTIFICATION	B-1B
ALBA	ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	ANODE
AYQS	TERMINAL CIRCLE DIAMETER	0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
CBBL	FEATURES PROVIDED	GOLD PLATED LEADS
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
CTQX	CURRENT RATING PER CHARACTERISTIC	200.0 AMPERES MAXIMUM AVERAGE GATE POWER DISSIPATION
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	-65.0 DEG CELSIUS AMBIENT AIR AND 175.00 DEG CELSIUS AMBIENT AIR
CXCY	III PART NAME ASSIGNED BY CONTROLLING AGENCY	SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
FEAT	SPECIAL FEATURES	METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010 ,+ OR - .002
PMLC	III PRECIOUS MATERIAL AND LOCATION	BACK (CATHODE) GOLD
PRMT	III PRECIOUS MATERIAL	GOLD