Mfg Part Number: CY6116-55LMB | Alternate P/N: CY611655LMB | NSN : 5962-01-302-0502 |
NIIN : 013020502 | CAGE Code : 65786 | Manufacturer: Cypress Semiconductor Inc |
Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for your continued interest in the parts associated with the NSN 5962-01-302-0502, those of which are readily available for purchase on Automatize Electronics. The Microcircuit Memory item associated with the part number CY6116-55LMB, by Cypress Semiconductor Inc, is currently available on our database; thus, if you wish to begin the part number CY6116-55LMB procurement process, we ask that you please fill out and submit an Instant RFQ form detailing your requirements on parts needed. This includes desired quantities, target prices, expected shipping time frames, and more, as applicable. Upon receival, our representatives will harness your provided information and formulate a solution which satisfies your operational needs in just 15 minutes or less.
With our global supply chain stretching across the United States, Canada, and the United Kingdom, Automatize Electronics can provide expedited shipping on select NSN products with the CAGE Code 65786, strategically assisting entities facing an Aircraft on Ground (AOG) situation or other unique time constraint. Operating with a strict NO CHINA SOURCING pledge, all items are shipped alongside their manufacturer trace documentation or qualifying certifications, ensuring that customers feel confident in every purchase made. With cost savings and rapid lead times bolstering every order, experience all of what Automatize Electronics has to offer on products with the NSN 5962-01-302-0502 by submitting your RFQ for parts by Cypress Semiconductor Inc. submit a quote for the part number CY6116-55LMB, today!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-302-0502 Item Description: Microcircuit Memory | 5962 | 013020502 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Cy6116-55lmb | 5 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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